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IS63WV1024BLL IS64WV1024BLL
128K x 8 HIGH-SPEED CMOS STATIC RAM
ISSI
MAY 2006
(R)
FEATURES
* High-speed access time: 12 ns: 3.3V + 10% 15 ns: 2.5V - 3.6V * High-performance, low-power CMOS process * CMOS Low Power Operation 50 mW (typical) operating current 25 W (typical) standby current * Multiple center power and ground pins for greater noise immunity * Easy memory expansion with CE and OE options * CE power-down * Fully static operation: no clock or refresh required * TTL compatible inputs and outputs * Packages available: - 32-pin TSOP (Type II) - 32-pin sTSOP (Type I) - 48-Ball miniBGA (6mm x 8mm) - 32-pin 300-mil SOJ * Lead-free available
DESCRIPTION
The ISSI IS63/64WV1024BLL is a very high-speed, low power, 131,072-word by 8-bit CMOS static RAM. The IS63/64WV1024BLL is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE is HIGH (deselected), the device assumes a standby mode at which the power dissipation can be reduced down to 25 W (typical) with CMOS input levels. The IS63/64WV1024BLL operates from a single VDD power supply. The IS63/64WV1024BLL is available in 32-pin TSOP (Type II), 32-pin sTSOP (Type I), 48-Ball miniBGA (6mm x 8mm), and 32-pin SOJ (300-mil) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
128K X 8 MEMORY ARRAY
VDD GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE OE WE
Copyright (c) 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
CONTROL CIRCUIT
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
1
IS63WV1024BLL IS64WV1024BLL
PIN CONFIGURATION
32-Pin SOJ
ISSI
PIN CONFIGURATION
32-Pin TSOP (Type II) (T) 32-Pin sTSOP (Type I) (H)
(R)
A0 A1 A2 A3 CE I/O0 I/O1 VDD GND I/O2 I/O3 WE A4 A5 A6 A7
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17
A16 A15 A14 A13 OE I/O7 I/O6 GND VDD I/O5 I/O4 A12 A11 A10 A9 A8
A0 A1 A2 A3 CE I/O0 I/O1 VDD GND I/O2 I/O3 WE A4 A5 A6 A7 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A16 A15 A14 A13 OE I/O7 I/O6 GND VDD I/O5 I/O4 A12 A11 A10 A9 A8
PIN DESCRIPTIONS
A0-A16 CE OE WE I/O0-I/O7 VDD GND Address Inputs Chip Enable Input Output Enable Input Write Enable Input Bidirectional Ports Power Ground
PIN CONFIGURATION
48-mini BGA (B) (6 mm x 8 mm)
1 2 3 4 5 6
A B C D E F G H
NC I/O1 I/O2 GND VDD I/O3 I/O4 NC
OE NC NC NC NC NC NC A10
A2 A1 A0 NC NC A14 A15 A16
A6 A5 A4 A3 NC A11 A12 A13
A7 CE NC NC NC I/O5 WE A9
NC I/O8 I/O7 VDD GND I/O6 A8 NC
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
IS63WV1024BLL IS64WV1024BLL
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X H H L CE H L L L OE X H L X I/O Operation High-Z High-Z DOUT DIN VDD Current ISB1, ISB2 ICC1, ICC2 ICC1, ICC2 ICC1, ICC2
ISSI
(R)
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TSTG PT VDD Parameter Terminal Voltage with Respect to GND Storage Temperature Power Dissipation VDD Related to GND Value -0.5 to VDD+0.5 -65 to +150 1.5 -0.2 to +3.9 Unit V C W V
Note: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
OPERATING RANGE (VDD)
Range Commercial Industrial Automotive Ambient Temperature 0C to +70C -40C to +85C -40C to +125C VDD (15 ns) 2.5V-3.6V 2.5V-3.6V 2.5V-3.6V VDD (12 ns) 3.3V + 10% 3.3V + 10% 3.3V + 10%
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
3
IS63WV1024BLL IS64WV1024BLL
DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 2.5V-3.6V
Symbol VOH VOL VIH VIL ILI ILO Note:
1. VIL (min.) = -0.3V DC; VIL (min.) = -2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
ISSI
Test Conditions VDD = Min., IOH = -1.0 mA VDD = Min., IOL = 1.0 mA Min. 2.3 -- 2.0 -0.3 GND VIN VDD GND VOUT VDD, Outputs Disabled -2 -2 Max. -- 0.4 VDD + 0.3 0.8 2 2 Unit V V V V A A
(R)
Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage
DC ELECTRICAL CHARACTERISTICS (Over Operating Range) VDD = 3.3V + 10%
Symbol VOH VOL VIH VIL ILI ILO Note:
1. VIL (min.) = -0.3V DC; VIL (min.) = -2.0V AC (pulse width - 2.0 ns). Not 100% tested. VIH (max.) = VDD + 0.3V DC; VIH (max.) = VDD + 2.0V AC (pulse width - 2.0 ns). Not 100% tested.
Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage
Test Conditions VDD = Min., IOH = -4.0 mA VDD = Min., IOL = 8.0 mA
Min. 2.4 -- 2 -0.3
Max. -- 0.4 VDD + 0.3 0.8 2 2
Unit V V V V A A
GND VIN VDD GND VOUT VDD, Outputs Disabled
-2 -2
4
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
IS63WV1024BLL IS64WV1024BLL
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC VDD Dynamic Operating Supply Current Test Conditions VDD = Max., IOUT = 0 mA, f = fMAX Options
COM. IND. AUTO
ISSI
-12 ns Min. Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- 35 45 60 20 5 5 5 3 4 4 20 50 75 6 -15 ns Min. Max. -- -- -- -- -- -- -- -- -- -- -- -- -- -- 30 40 50 20 5 5 5 3 4 4 20 50 75 6 Unit mA
(R)
typ.(2) ICC1 Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) VDD = Max., Iout = 0mA, f = 0 VDD = Max., VIN = VIH or VIL CE VIH, f = 0 VDD = Max., CE VDD - 0.2V, VIN VDD - 0.2V, or VIN 0.2V, f = 0
COM. IND. AUTO
mA
ISB1
COM. IND. AUTO COM. IND. AUTO
mA
ISB2
uA
typ.(2)
Note: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change. 2. Typical values are measured at VDD=2.5V, TA=25oC. Not 100% tested.
CAPACITANCE(1)
Symbol CIN COUT Parameter Input Capacitance Input/Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
Note: 1. Tested initially and after any design or process changes that may affect these parameters.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
5
IS63WV1024BLL IS64WV1024BLL
AC TEST CONDITIONS
Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level (VRef) Output Load Unit (2.5V-3.6V) 0V to VDD V 1.5ns VDD/2 See Figures 1a and 1b Unit (3.3V + 10%) 0V to VDD V 1.5ns VDD/2 + 0.05 See Figures 1a and 1b
ISSI
(R)
AC TEST LOADS
319
Zo=50 OUTPUT
2.5V
50 VRef 30 pF Including jig and scope
OUTPUT 5 pF Including jig and scope
Figure 1b.
353
Figure 1a.
6
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
IS63WV1024BLL IS64WV1024BLL
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE Access Time OE Access Time OE to Low-Z Output OE to High-Z Output CE to Low-Z Output CE to High-Z Output CE to Power Up Time CE to Power Down Time -12 ns Min. Max. 12 -- 3 -- -- 0 0 3 0 0 -- -- 12 -- 12 6 -- 6 -- 6 -- 12 -15 ns Min. Max. 15 -- 3 -- -- 0 0 3 0 0 -- -- 15 -- 15 7 -- 6 -- 6 -- 15
ISSI
Unit ns ns ns ns ns ns ns ns ns ns ns
(R)
tRC tAA tOHA tACE tDOE tLZOE(2) tHZOE(2) tLZCE tPU tPD
(2) (2)
tHZCE
Notes: 1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to VDD-0.3V and output loading specified in Figure 1. 2. Tested with the loading specified in Figure 1. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
7
IS63WV1024BLL IS64WV1024BLL
AC WAVEFORMS READ CYCLE NO. 1(1,2)
t RC
ADDRESS
ISSI
(R)
t AA t OHA
DOUT
PREVIOUS DATA VALID
t OHA
DATA VALID
READ1.eps
READ CYCLE NO. 2(1,3)
t RC
ADDRESS
t AA
OE
t OHA
t DOE
CE
t HZOE
t LZOE t ACE t LZCE t HZCE
DATA VALID
CE_RD2.eps
DOUT
HIGH-Z
Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE = VIL. 3. Address is valid prior to or coincident with CE LOW transitions.
8
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
IS63WV1024BLL IS64WV1024BLL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range)
Symbol Parameter Write Cycle Time CE to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time
(1) 1
ISSI
-12 ns Min. Max. 12 9 9 0 0 9 11 9 0 -- 3 -- -- -- -- -- -- -- -- -- 6 -- -15 ns Min. Max. 15 10 10 0 0 10 12 9 0 -- 3 -- -- -- -- -- -- -- -- -- 7 -- Unit ns ns ns ns ns ns ns ns ns ns ns
(R)
tWC tSCE tAW tHA tSA tPWE tSD tHD tHZWE
(2)
WE Pulse Width (OE High) WE Pulse Width (OE Low) Data Setup to Write End Data Hold from Write End WE LOW to High-Z Output WE HIGH to Low-Z Output
tPWE2(2)
tLZWE(2)
Notes: 1. Test conditions assume signal transition times of 3ns or less, timing reference levels of 1.25V, input pulse levels of 0.4V to VDD-0.3V and output loading specified in Figure 1a. 2. Tested with the loading specified in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write.
AC WAVEFORMS WRITE CYCLE NO. 1(1,2 (CE Controlled, OE = HIGH or LOW)
t WC
ADDRESS
VALID ADDRESS
t SA
CE
t SCE
t HA
WE
t AW t PWE1 t PWE2 t HZWE t LZWE
HIGH-Z
DOUT
DATA UNDEFINED
t SD
DIN
t HD
DATAIN VALID
CE_WR1.eps
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
9
IS63WV1024BLL IS64WV1024BLL
AC WAVEFORMS WRITE CYCLE NO. 2(1) (WE Controlled, OE = HIGH during Write Cycle)
t WC
ADDRESS
VALID ADDRESS
ISSI
(R)
t HA
OE
CE
LOW
t AW t PWE1
WE
t SA
DOUT
DATA UNDEFINED
t HZWE
HIGH-Z
t LZWE
t SD
DIN
t HD
DATAIN VALID
CE_WR2.eps
WRITE CYCLE NO. 3 (WE Controlled: OE is LOW During Write Cycle)
t WC
ADDRESS
VALID ADDRESS
OE CE
LOW
t HA
LOW
t AW t PWE2
WE
tSA
DOUT
DATA UNDEFINED
t HZWE
HIGH-Z
t LZWE
t SD
DIN
t HD
DATAIN VALID
CE_WR3.eps
Notes:
1. The internal write time is defined by the overlap of CE LOW and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE > VIH.
10
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
IS63WV1024BLL IS64WV1024BLL
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol Parameter VDD for Data Retention Data Retention Current Test Condition VDD = 1.8V, CE VDD - 0.2V Operations Min. 1.8
COM. IND. AUTO.
ISSI
Typ.(1) -- 6 6 6 -- -- Max. 3.6 20 50 75 -- -- Unit V A See Data Retention Waveform
(R)
VDR
IDR
-- -- -- 0
tSDR tRDR
Note:
Data Retention Setup Time Recovery Time
See Data Retention Waveform See Data Retention Waveform
O
ns ns
tRC
1. Typical values are measured at VDD = 2.5V, TA = 25 C. Not 100% tested.
DATA RETENTION WAVEFORM (CE Controlled)
tSDR VDD
Data Retention Mode
tRDR
VDR CE VDD - 0.2V
CE GND
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
11
IS63WV1024BLL IS64WV1024BLL
ORDERING INFORMATION Industrial Range: -40C to +85C
Speed (ns) 12 Order Part No. IS63WV1024BLL-12TI IS63WV1024BLL-12TLI IS63WV1024BLL-12HI IS63WV1024BLL-12HLI IS63WV1024BLL-12JI IS63WV1024BLL-12JLI IS63WV1024BLL-12BI IS63WV1024BLL-12BLI Package 32-pin TSOP (Type II) 32-pin TSOP (Type II), Lead-free sTSOP (Type I) (8mm x13.4mm) sTSOP (Type I) (8mm x13.4mm), Lead-free 32-pin SOJ (300-mil) 32-pin SOJ (300-mil), Lead-free mBGA(6mmx8mm) mBGA(6mmx8mm), Lead-free
ISSI
(R)
Automotive Range (A3): -40C to +85C
Speed (ns) 15 (12*) Order Part No. IS64WV1024BLL-15TA3 IS64WV1024BLL-15TLA3 IS64WV1024BLL-15HA3 IS64WV1024BLL-15HLA3 IS64WV1024BLL-15BA3 IS64WV1024BLL-15BLA3 Package 32-pin TSOP (Type II) 32-pin TSOP (Type II), Lead-free sTSOP (Type I) (8mm x13.4mm) sTSOP (Type I) (8mm x13.4mm), Lead-free mBGA(6mmx8mm) mBGA(6mmx8mm), Lead-free
Note: 1. Speed = 12ns for VDD = 3.3V + 10%. Speed = 15ns for VDD = 2.5V-3.6V.
12
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. B 05/10/06
PACKAGING INFORMATION
300-mil Plastic SOJ Package Code: J
N
ISSI
(R)
E1
E
1
D A
SEATING PLANE
B
A2 C
e
b
A1
E2
MILLIMETERS Sym.
N0. Leads A A1 A2 b B C D E E1 E2 e -- 0.64 2.41 0.41 0.66 0.20 17.02 8.26 7.49 6.27
INCHES Min. Typ. Max.
Min. Typ. Max.
24/26 -- -- -- -- -- -- -- -- -- -- 3.56 -- 2.67 0.51 0.81 0.25 17.27 8.76 7.75 7.29
Notes: 1. Controlling dimension: inches, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of
the package.
4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
-- 0.025 0.095 0.016 0.026 0.008 0.670 0.325 0.295 0.247
-- 0.140 -- -- -- -- -- -- -- -- -- -- 0.105 0.020 0.032 0.010 0.680 0.345 0.305 0.287
1.27 BSC
0.050 BSC
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. D 02/25/03
PACKAGING INFORMATION
300-mil Plastic SOJ Package Code: J
ISSI
(R)
MILLIMETERS Sym.
N0. Leads A A1 A2 b B C D E E1 E2 e -- 0.64 2.41 0.41 0.66 0.20 18.29 8.26 7.49 6.27
INCHES Min. Typ. Max. Sym.
N0. Leads
MILLIMETERS Min. Typ. Max.
32 -- 0.64 2.41 0.41 0.66 0.20 20.83 8.26 7.49 6.27 -- -- -- -- -- -- -- -- -- -- 3.56 -- 2.67 0.51 0.81 0.25 21.08 8.76 7.75 7.29 --
INCHES Min. Typ. Max.
Min. Typ. Max.
28 -- -- -- -- -- -- -- -- -- -- 3.56 -- 2.67 0.51 0.81 0.25 18.54 8.76 7.75 7.29
-- 0.025 0.095 0.016 0.026 0.008 0.720 0.325 0.295 0.247
-- -- -- -- -- -- -- -- -- --
0.140 -- 0.105 0.020 0.032 0.010 0.730 0.345 0.305 0.287
A A1 A2 b B C D E E1 E2 e
-- -- -- -- -- -- -- -- -- --
0.140 -- 0.105 0.020 0.032 0.010 0.830 0.345 0.305 0.287
0.025 0.095 0.016 0.026 0.008 0.820 0.325 0.295 0.247
1.27 BSC
0.050 BSC
1.27 BSC
0.050 BSC
2
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. D 02/25/03
PACKAGING INFORMATION
Plastic STSOP - 32 pins Package Code: H (Type I)
A2 A
ISSI
A1
(R)
1
N
E
b
e D1 D S
SEATING PLANE
L
C
Plastic STSOP (H - Type I) Millimeters Inches Symbol Min Max Min Max Ref. Std. N 32 A -- 1.25 -- 0.049 A1 0.05 -- 0.002 -- A2 0.95 1.05 0.037 0.041 b 0.17 0.23 0.007 0.009 C 0.14 0.16 0.0055 0.0063 D 13.20 13.60 0.520 0.535 D1 11.70 11.90 0.461 0.469 E 7.90 8.10 0.311 0.319 e 0.50 BSC 0.020 BSC L 0.30 0.70 0.012 0.028 S 0.28 Typ. 0.011 Typ. 0 5 0 5
Notes: 1. Controlling dimension: millimeters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D1 and E do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
Integrated Silicon Solution, Inc.
PK13197H32 Rev. B 04/21/03
PACKAGING INFORMATION
Mini Ball Grid Array Package Code: B (48-pin)
Top View 1 2 3 4 56 6
ISSI
Bottom View
b (48x)
(R)
5
4
3
2
1
A B C D D E F G H D1
e
A B C D E F G H
e E E1
A2 SEATING PLANE A1
A
Notes: 1. Controlling dimensions are in millimeters.
mBGA - 6mm x 8mm
MILLIMETERS Sym.
N0. Leads A A1 A2 D D1 E E1 e b -- 0.24 0.60 7.90 5.90
mBGA - 8mm x 10mm
INCHES Min. Typ. Max. Sym.
N0. Leads
MILLIMETER Min. Typ. Max.
48 -- 0.24 0.60 9.90 7.90 -- -- -- -- -- 1.20 0.30 -- 10.10 8.10 --
INCHES Min. Typ. Max.
Min. Typ. Max.
48 -- -- -- -- -- 1.20 0.30 -- 8.10 6.10
-- 0.009 0.024 0.311 0.232
-- -- -- -- --
0.047 0.012 -- 0.319 0.240
A A1 A2 D D1 E E1 e b
-- -- -- -- --
0.047 0.012 -- 0.398 0.319
0.009 0.024 0.390 0.311
5.25 BSC 3.75 BSC 0.75 BSC 0.30 0.35 0.40
0.207 BSC 0.148 BSC 0.030 BSC 0.012 0.014 0.016
5.25 BSC 3.75 BSC 0.75 BSC 0.30 0.35 0.40
0.207 BSC 0.148 BSC 0.030 BSC 0.012 0.014 0.016
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. D 01/15/03
PACKAGING INFORMATION
Plastic TSOP Package Code: T (Type II)
ISSI
Notes: 1. Controlling dimension: millimieters, unless otherwise specified. 2. BSC = Basic lead spacing between centers. 3. Dimensions D and E1 do not include mold flash protrusions and should be measured from the bottom of the package. 4. Formed leads shall be planar with respect to one another within 0.004 inches at the seating plane.
(R)
N
N/2+1
E1
E
1 D
N/2
SEATING PLANE
ZD
A
.
e b L A1 C
Symbol Ref. Std. No. Leads A A1 b C D E1 E e L ZD
Millimeters Min Max
Inches Min Max
Plastic TSOP (T - Type II) Millimeters Inches Min Max Min Max 44 -- 1.20 -- 0.047 0.05 0.15 0.002 0.006 0.30 0.45 0.012 0.018 0.12 0.21 0.005 0.008 18.31 18.52 0.721 0.729 10.03 10.29 0.395 0.405 11.56 11.96 0.455 0.471 0.80 BSC 0.032 BSC 0.41 0.60 0.016 0.024 0.81 REF 0.032 REF 0 5 0 5
Millimeters Min Max 50 -- 1.20 0.05 0.15 0.30 0.45 0.12 0.21 20.82 21.08 10.03 10.29 11.56 11.96 0.80 BSC 0.40 0.60 0.88 REF 0 5
Inches Min Max
(N) 32 -- 1.20 -- 0.047 0.05 0.15 0.002 0.006 0.30 0.52 0.012 0.020 0.12 0.21 0.005 0.008 20.82 21.08 0.820 0.830 10.03 10.29 0.391 0.400 11.56 11.96 0.451 0.466 1.27 BSC 0.050 BSC 0.40 0.60 0.016 0.024 0.95 REF 0.037 REF 0 5 0 5
-- 0.047 0.002 0.006 0.012 0.018 0.005 0.008 0.820 0.830 0.395 0.405 0.455 0.471 0.031 BSC 0.016 0.024 0.035 REF 0 5
Copyright (c) 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. -- www.issi.com -- 1-800-379-4774
Rev. F 06/18/03

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